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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.7 MAX. 1500 700 8 15 125 1.0 2.0 UNIT V V A A W V A V s
Tmb 25 C IC = 4.5 A; IB = 1.6 A f = 16kHz IF = 4.5 A ICsat = 4.5 A; f = 16kHz
PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 125 150 150 UNIT V V A A A A W C C
Tmb 25 C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DW
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL PARAMETER ICES ICES VCEOsust VCEsat VBEsat hFE VF Collector cut-off current 1 CONDITIONS MIN. 700 6 TYP. 13 1.6 MAX. 1.0 2.0 1.0 1.1 30 2.0 UNIT mA mA V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A Base-emitter saturation voltage IC = 4.5 A; IB = 2 A DC current gain IC = 100 mA; VCE = 5 V Diode forward voltage IF = 4.5 A
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL fT CC PARAMETER Transition frequency at f = 5 MHz Collector capacitance at f = 1MHz Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time CONDITIONS IC = 0.1 A;VCE = 5 V VCB = 10 V ICsat = 4.5 A;Lc= 1 mH;Cfb = 4 nF IB(end) = 1.4 A; LB = 6 H; -VBB = -4 V; TYP. 7 125 MAX. UNIT MHz pF s s
ts tf
6.5 0.7
-
1 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DW
TRANSISTOR IC DIODE
ICsat
+ 150 v nominal adjust for ICsat
t
IB
IBend t 20us 26us 64us
1mH
D.U.T. IBend LB 12nF
VCE
t
-VBB
Fig.1. Switching times waveforms. Fig.3. Switching times test circuit
ICsat 90 % IC
h FE BU508AD
100
10 % tf ts IB IBend
10
t
t
1 0.1
- IBM
1 IC/A
10
Fig.2. Switching times definitions.
Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DW
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
VCESAT / V
BU508AD
10
Zth K/W
bu508aw
1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0 P D tp t D= p T T
0.1 1
t 1.0E+1
IC / A
10
0.001 1.0E-07
1.0E-5 t/s
1.0E-3
1.0E-1
Fig.5. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
BU508AD
Fig.8. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
Normalised Power Derating
with heatsink compound
1.4
VBESAT / V
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
1.2 IC = 6A 1 IC = 4.5A IC = 3A 0.8
0.6
0
0 1 2 3
20
40
60
IB / A
4
80 Ths / C
100
120
140
Fig.6. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
BU508AD
Fig.9. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)
VCESAT/V 10
1 IC = 6A
IC = 4.5A IC = 3A 0.1 0.1 1 IB/A 10
Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DW
Fig.10. Forward bias safe operating area. Ths < 25C (1) Ptot max line. (2) Second-breakdown limits (independent of temperature). I Region of permissible DC operation. II Permissible extension for repetitive pulse operation.
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DW
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.11. SOT429; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
July 1998
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DW
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
July 1998
7
Rev 1.200

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